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| SPB07N60C3 Cool MOSTM Power Transistor Feature * New revolutionary high voltage technology * Ultra low gate charge * Periodic avalanche rated * Extreme dv/dt rated * High peak current capability * Improved transconductance VDS @ Tjmax RDS(on) ID 650 0.6 7.3 PG-TO263 V A Type Package Ordering Code Marking 07N60C3 SPB07N60C3 PG-TO263 Q67040-S4394 Maximum Ratings Parameter Symbol Value Unit SPB Continuous drain current TC = 25 C TC = 100 C ID A 7.3 4.6 Pulsed drain current, tp limited by Tjmax Avalanche energy, single pulse ID=5.5A, VDD =50V ID puls 21.9 A EAS 230 mJ Avalanche energy, repetitive tAR limited by Tjmax2) ID=7.3A, VDD =50V EAR 0.5 Avalanche current, repetitive tAR limited by Tjmax Gate source voltage static IAR 7.3 A VGS 20 30 V Gate source voltage AC (f >1Hz) Power dissipation, TC = 25C VGS Ptot 83 W Operating and storage temperature Reverse diode dv/dt 6) T j , Tstg dv/dt -55...+150 15 C V/ns Rev. 2.5 Page 1 2005-09-14 SPB07N60C3 Maximum Ratings Parameter Symbol Value Unit Drain Source voltage slope V DS = 480 V, ID = 7.3 A, Tj = 125 C dv/dt 50 V/ns Thermal Characteristics Parameter Symbol min. RthJC RthJC_FP RthJA RthJA_FP RthJA Values typ. max. Unit Thermal resistance, junction - case Thermal resistance, junction - case, FullPAK Thermal resistance, junction - ambient, leaded Thermal resistance, junction - ambient, FullPAK SMD version, device on PCB: @ min. footprint @ 6 cm 2 cooling area 3) - 35 1.5 3.9 62 80 62 - K/W Soldering temperature, reflow soldering, MSL1 1.6 mm (0.063 in.) from case for 10s Tsold - - 260 C Electrical Characteristics, at T j=25C unless otherwise specified Parameter Symbol Conditions min. Drain-source breakdown voltage V(BR)DSS VGS=0V, ID=0.25mA Drain-Source avalanche V(BR)DS VGS=0V, ID=7.3A breakdown voltage Gate threshold voltage Zero gate voltage drain current VGS(th) I DSS ID=350A, VGS=VDS VDS=600V, VGS=0V, Tj=25C Tj=150C Values typ. 700 3 0.5 0.54 1.46 0.8 max. 3.9 Unit V 600 2.1 - A 1 100 100 0.6 nA Gate-source leakage current I GSS VGS=30V, VDS=0V VGS=10V, ID=4.6A Tj=25C Tj=150C Drain-source on-state resistance RDS(on) Gate input resistance RG f=1MHz, open drain Rev. 2.5 Page 2 2005-09-14 SPB07N60C3 Electrical Characteristics, at Tj = 25 C, unless otherwise specified Parameter Characteristics Transconductance Input capacitance Output capacitance Reverse transfer capacitance Symbol Conditions min. Values typ. 6 790 260 16 30 55 6 3.5 60 7 max. 100 15 Unit g fs Ciss Coss Crss V DS2*I D*RDS(on)max, ID=4.6A V GS=0V, V DS=25V, f=1MHz - S pF Effective output capacitance,4) Co(er) energy related Effective output capacitance,5) Co(tr) time related Turn-on delay time Rise time Turn-off delay time Fall time Gate Charge Characteristics Gate to source charge Gate to drain charge Gate charge total Gate plateau voltage Qgs Qgd Qg V GS=0V, V DS=0V to 480V td(on) tr td(off) tf V DD=380V, V GS=0/13V, ID=7.3A, RG=12, Tj=125C - ns VDD=480V, ID=7.3A - 3 9.2 21 5.5 27 - nC VDD=480V, ID=7.3A, VGS=0 to 10V V(plateau) VDD=480V, ID=7.3A V 1Limited only by maximum temperature 2Repetitve avalanche causes additional power losses that can be calculated as PAV=EAR*f. 3Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6cm (one layer, 70 m thick) copper area for drain connection. PCB is vertical without blown air. 4C o(er) is a fixed capacitance that gives the same stored energy as Coss while VDS is rising from 0 to 80% V DSS. 5C o(tr) is a fixed capacitance that gives the same charging time as Coss while V DS is rising from 0 to 80% V DSS. 6I <=I , di/dt<=400A/us, V SD D DClink=400V, Vpeak Page 3 2005-09-14 SPB07N60C3 Electrical Characteristics Parameter Inverse diode continuous forward current Inverse diode direct current, pulsed Inverse diode forward voltage Reverse recovery time Reverse recovery charge Peak reverse recovery current Peak rate of fall of reverse recovery current Typical Transient Thermal Characteristics Symbol SPB Rth1 Rth2 Rth3 Rth4 Rth5 Rth6 0.024 0.046 0.085 0.308 0.317 0.112 Tj Symbol IS ISM VSD trr Qrr Irrm dirr /dt Conditions min. TC=25C Values typ. 1 400 4 28 800 max. 7.3 21.9 1.2 600 - Unit A VGS=0V, IF=IS VR=480V, IF=IS , diF/dt=100A/s - V ns C A A/s Tj=25C Value Unit K/W Symbol SPB Cth1 Cth2 Cth3 Cth4 Cth5 Cth6 0.00012 Value Unit Ws/K 0.0004578 0.000645 0.001867 0.004795 0.045 E xternal H eatsink R th1 R th,n T case P tot (t) C th1 C th2 C th,n T am b Rev. 2.5 Page 4 2005-09-14 SPB07N60C3 1 Power dissipation Ptot = f (TC) 100 SPP07N60C3 2 Power dissipation FullPAK Ptot = f (TC) 34 W W 80 70 28 24 Ptot 60 50 40 Ptot C 20 16 12 30 20 10 0 0 8 4 0 0 20 40 60 80 100 120 160 20 40 60 80 100 120 C 160 TC TC 3 Safe operating area ID = f ( V DS ) parameter : D = 0 , TC =25C 10 2 4 Safe operating area FullPAK ID = f (VDS) parameter: D = 0, TC = 25C 10 2 A A 10 1 10 1 ID 10 0 ID 10 0 10 -1 tp = 0.001 ms tp = 0.01 ms tp = 0.1 ms tp = 1 ms DC 10 -1 tp = 0.001 ms tp = 0.01 ms tp = 0.1 ms tp = 1 ms tp = 10 ms DC 1 2 3 10 -2 0 10 10 1 10 2 V VDS 10 3 10 -2 0 10 10 10 10 V VDS Rev. 2.5 Page 5 2005-09-14 SPB07N60C3 5 Transient thermal impedance ZthJC = f (t p) parameter: D = tp/T 10 1 6 Transient thermal impedance FullPAK ZthJC = f (t p) parameter: D = tp/t 10 1 K/W K/W 10 0 10 0 ZthJC 10 -1 ZthJC D = 0.5 D = 0.2 D = 0.1 D = 0.05 D = 0.02 D = 0.01 single pulse 10 -1 10 -2 10 -2 D = 0.5 D = 0.2 D = 0.1 D = 0.05 D = 0.02 D = 0.01 single pulse 10 -3 -7 10 10 -6 10 -5 10 -4 10 -3 s tp 10 -1 10 -3 -7 -6 -5 -4 -3 -2 -1 10 10 10 10 10 10 10 1 s 10 tp 7 Typ. output characteristic ID = f (VDS); Tj=25C parameter: tp = 10 s, VGS 24 8 Typ. output characteristic ID = f (VDS); Tj=150C parameter: tp = 10 s, VGS 13 A 20V 10V 8V A 7V 11 10 20V 8V 6.5V 6V ID ID 16 6,5V 9 8 7 5.5V 12 6V 6 5 5V 8 5,5V 4 3 4.5V 4V 4 5V 4,5V 2 1 25 0 0 2 4 6 8 0 0 5 10 15 VDS 10 12 14 16 18 20 22 V 25 V VDS Rev. 2.5 Page 6 2005-09-14 SPB07N60C3 9 Typ. drain-source on resistance RDS(on)=f(ID) parameter: Tj=150C, VGS 10 10 Drain-source on-state resistance RDS(on) = f (Tj) parameter : ID = 4.6 A, VGS = 10 V 3.4 SPP07N60C3 8 4V 4.5V 2.8 RDS(on) 5.5V RDS(on) 7 6 5 4 3 2 1 0 0 5V 2.4 2 1.6 1.2 0.8 0.4 0 -60 98% typ 6V 6.5V 8V 20V 2 4 6 8 10 12 A 15 ID -20 20 60 100 C 180 Tj 11 Typ. transfer characteristics ID= f ( VGS ); VDS 2 x ID x RDS(on)max parameter: tp = 10 s 24 12 Typ. gate charge VGS = f (Q Gate) parameter: ID = 7.3 A pulsed 16 SPP07N60C3 A V 20 18 25C 12 VGS ID 16 14 12 10 150C 10 0,2 VDS max 0,8 VDS max 8 6 8 6 4 2 2 0 0 2 4 6 8 10 12 14 16 4 V 20 VGS 0 0 4 8 12 16 20 24 28 nC 34 Q Gate Rev. 2.5 Page 7 2005-09-14 SPB07N60C3 13 Forward characteristics of body diode IF = f (VSD) parameter: Tj , tp = 10 s 10 2 SPP07N60C3 14 Typ. switching time t = f (ID), inductive load, T j=125C par.: V DS=380V, VGS=0/+13V, R G=12 90 A ns td(off) 70 10 1 60 IF t 50 40 10 0 Tj = 25 C typ Tj = 150 C typ Tj = 25 C (98%) Tj = 150 C (98%) 10 -1 0 0.4 0.8 1.2 1.6 2 2.4 V 3 10 0 0 20 30 tf td(on) tr 1 2 3 4 5 6 VSD A ID 8 15 Typ. switching time t = f (RG), inductive load, Tj=125C par.: VDS=380V, VGS=0/+13V, ID=7.3 A 500 16 Typ. drain current slope di/dt = f(R G), inductive load, Tj = 125C par.: V DS=380V, VGS=0/+13V, ID=7.3A 3000 ns A/s 400 350 300 250 200 150 100 50 0 0 0 0 1000 td(off) di/dt 2000 t 1500 di/dt(on) td(on) tf tr 500 di/dt(off) 20 40 60 80 100 130 RG 20 40 60 80 100 130 RG Rev. 2.5 Page 8 2005-09-14 SPB07N60C3 17 Typ. drain source voltage slope 18 Typ. switching losses E = f (ID), inductive load, Tj=125C par.: V DS=380V, VGS=0/+13V, R G=12 0.025 *) E on includes SDP06S60 diode commutation losses. dv/dt = f(RG), inductive load, Tj = 125C par.: VDS=380V, VGS=0/+13V, ID=7.3A 100 V/ns 80 70 60 50 40 30 20 10 0 0 dv/dt(off) dv/dt(on) mWs dv/dt E 0.015 0.01 Eoff 0.005 Eon* 20 40 60 80 RG 120 0 0 1 2 3 4 5 6 A ID 8 19 Typ. switching losses E = f(RG), inductive load, Tj=125C par.: VDS=380V, VGS=0/+13V, ID=7.3A 0.2 20 Avalanche SOA IAR = f (tAR) par.: Tj 150 C 8 mWs 0.16 *) Eon includes SDP06S60 diode commutation losses. A Tj(START)=25C 6 0.14 IAR E 0.12 0.1 Eoff 5 Tj(START)=125C 4 0.08 0.06 0.04 0.02 0 0 3 Eon* 2 1 20 40 60 80 100 130 RG 0 -3 10 10 -2 10 -1 10 0 10 1 10 2 s 10 t AR 4 Rev. 2.5 Page 9 2005-09-14 SPB07N60C3 21 Avalanche energy EAS = f (Tj) par.: ID = 5.5 A, V DD = 50 V 260 22 Drain-source breakdown voltage V(BR)DSS = f (Tj) 720 SPP07N60C3 mJ 220 V EAS 180 160 140 120 100 80 60 40 20 0 20 40 60 80 100 120 V(BR)DSS C 200 680 660 640 620 600 580 560 540 -60 160 -20 20 60 100 C 180 Tj Tj 23 Avalanche power losses PAR = f (f ) parameter: E AR=0.5mJ 500 24 Typ. capacitances C = f (VDS) parameter: V GS=0V, f=1 MHz 10 4 pF W 10 3 Ciss PAR 300 C 10 2 200 Coss 10 1 100 Crss 04 10 10 5 MHz f 10 6 10 0 0 100 200 300 400 V 600 VDS Rev. 2.5 Page 10 2005-09-14 SPB07N60C3 25 Typ. Coss stored energy Eoss=f(VDS) 5.5 J 4.5 4 Eoss 3.5 3 2.5 2 1.5 1 0.5 0 0 100 200 300 400 V 600 VDS Definition of diodes switching characteristics Rev. 2.5 Page 11 2005-09-14 SPB07N60C3 PG-TO263-3-2/ PG-TO263-3-5/ PG-TO263-3-22 Rev. 2.5 Page 12 2005-09-14 SPB07N60C3 Published by Infineon Technologies AG 81726 Munchen Germany (c) Infineon Technologies AG 2006 All Rights Reserved. Attention please! The information herein is given to describe certain components and shall not be considered as warranted characteristics. Terms of delivery and rights to technical change reserved. We hereby disclaim any and all warranties, including but not limited to warranties of non-infringement, regarding circuits, descriptions and charts stated herein. Infineon Technologies is an approved CECC manufacturer. Information For further information on technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies Office in Germany or our Infineon Technologies Reprensatives worldwide (see address list). Warnings Due to technical requirements components may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies Office. Infineon Technologies Components may only be used in life-support devices or systems with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or system Life support devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. Rev. 2.5 Page 13 2005-09-14 |
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